Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM500N03CP ROG
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3,095
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 12.5A TO252 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 12.5W (Tc) N-Channel 30V 12.5A (Tc) 50 mOhm @ 8A, 10V 3V @ 250µA 7nC @ 4.5V 270pF @ 25V 4.5V, 10V ±20V
NVTFS5C466NLTAG
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1,710
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ON Semiconductor MOSFET N-CHANNEL 40V 51A 8WDFN Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerWDFN 8-WDFN (3.3x3.3) 38W (Tc) N-Channel 40V 51A (Tc) 7.3 mOhm @ 10A, 10V 2.2V @ 250µA 7nC @ 4.5V 880pF @ 25V 4.5V, 10V ±20V
NVTFS5C466NLWFTAG
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RFQ
3,635
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ON Semiconductor MOSFET N-CHANNEL 40V 51A 8WDFN Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerWDFN 8-WDFN (3.3x3.3) 38W (Tc) N-Channel 40V 51A (Tc) 7.3 mOhm @ 10A, 10V 2.2V @ 250µA 7nC @ 4.5V 880pF @ 25V 4.5V, 10V ±20V
IRL80HS120
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1,653
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Infineon Technologies MOSFET N-CH 80V 12.5A 6PQFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 80V 12.5A (Tc) 32 mOhm @ 7.5A, 10V 2V @ 10µA 7nC @ 4.5V 540pF @ 25V 4.5V, 10V ±20V