Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NDB6060
RFQ
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RFQ
834
In-stock
ON Semiconductor MOSFET N-CH 60V 48A TO-263AB - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) - N-Channel 60V 48A (Tc) 25 mOhm @ 24A, 10V 4V @ 250µA 70nC @ 10V 1800pF @ 25V - -
IRF640STRRPBF
RFQ
VIEW
RFQ
2,728
In-stock
Vishay Siliconix MOSFET N-CH 200V 18A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 3.1W (Ta), 130W (Tc) N-Channel 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 10V ±20V
SIHB12N65E-GE3
RFQ
VIEW
RFQ
2,275
In-stock
Vishay Siliconix MOSFET N-CH 650V 12A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 156W (Tc) N-Channel 650V 12A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 70nC @ 10V 1224pF @ 100V 10V ±30V
STB24NM65N
RFQ
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RFQ
2,381
In-stock
STMicroelectronics MOSFET N-CH 650V 19A D2PAK MDmesh™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 160W (Tc) N-Channel 650V 19A (Tc) 190 mOhm @ 9.5A, 10V 4V @ 250µA 70nC @ 10V 2500pF @ 50V 10V ±25V
IRF640STRLPBF
RFQ
VIEW
RFQ
3,106
In-stock
Vishay Siliconix MOSFET N-CH 200V 18A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 3.1W (Ta), 130W (Tc) N-Channel 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 10V ±20V