Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI4470EY-T1-GE3
RFQ
VIEW
RFQ
2,420
In-stock
Vishay Siliconix MOSFET N-CH 60V 9A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.85W (Ta) N-Channel - 60V 9A (Ta) 11 mOhm @ 12A, 10V 2V @ 250µA (Min) 70nC @ 10V - 6V, 10V ±20V
SI4470EY-T1-E3
RFQ
VIEW
RFQ
2,557
In-stock
Vishay Siliconix MOSFET N-CH 60V 9A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.85W (Ta) N-Channel - 60V 9A (Ta) 11 mOhm @ 12A, 10V 2V @ 250µA (Min) 70nC @ 10V - 6V, 10V ±20V
SI4435BDY-T1-E3
RFQ
VIEW
RFQ
1,549
In-stock
Vishay Siliconix MOSFET P-CH 30V 7A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) P-Channel - 30V 7A (Ta) 20 mOhm @ 9.1A, 10V 3V @ 250µA 70nC @ 10V - 4.5V, 10V ±20V
SI7186DP-T1-GE3
RFQ
VIEW
RFQ
3,530
In-stock
Vishay Siliconix MOSFET N-CH 80V 32A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 5.2W (Ta), 64W (Tc) N-Channel - 80V 32A (Tc) 12.5 mOhm @ 10A, 10V 4.5V @ 250µA 70nC @ 10V 2840pF @ 40V 10V ±20V