Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFH5053TR2PBF
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2,555
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Infineon Technologies MOSFET N-CH 100V 9.3A PQFN56 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) Single Die 3.1W (Ta), 8.3W (Tc) N-Channel - 100V 9.3A (Ta), 46A (Tc) 18 mOhm @ 9.3A, 10V 4.9V @ 100µA 36nC @ 10V 1510pF @ 50V 10V ±20V
DMNH10H028SPSQ-13
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3,263
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Diodes Incorporated MOSFET N-CH 100V 40A POWERDI506 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.6W (Ta) N-Channel - 100V 40A (Tc) 28 mOhm @ 20A, 10V 4V @ 250µA 36nC @ 10V 2245pF @ 50V 10V ±20V
IRFH5053TRPBF
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RFQ
2,777
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Infineon Technologies MOSFET N-CH 100V 9.3A PQFN56 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) Single Die 3.1W (Ta), 8.3W (Tc) N-Channel - 100V 9.3A (Ta), 46A (Tc) 18 mOhm @ 9.3A, 10V 4.9V @ 100µA 36nC @ 10V 1510pF @ 50V 10V ±20V
DMNH10H028SK3Q-13
RFQ
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RFQ
2,998
In-stock
Diodes Incorporated MOSFET N-CH 100V 55A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 2W (Ta) N-Channel - 100V 55A (Tc) 28 mOhm @ 20A, 10V 4V @ 250µA 36nC @ 10V 2245pF @ 50V 10V ±20V
FDD3672-F085
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RFQ
2,575
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ON Semiconductor MOSFET N-CH 100V 44A DPAK-3 Automotive, AEC-Q101, UltraFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 144W (Tc) N-Channel - 100V 44A (Tc) 47 mOhm @ 21A, 6V 4V @ 250µA 36nC @ 10V 1635pF @ 25V 6V, 10V ±20V
DMNH10H028SK3-13
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RFQ
2,500
In-stock
Diodes Incorporated MOSFET N-CH 100V 55A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2W (Ta) N-Channel - 100V 55A (Tc) 28 mOhm @ 20A, 10V 3.3V @ 250µA 36nC @ 10V 2245pF @ 50V 10V ±20V
DMNH10H028SPS-13
RFQ
VIEW
RFQ
2,438
In-stock
Diodes Incorporated MOSFET N-CH 100V 40A POWERDI - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.6W (Ta) N-Channel - 100V 40A (Tc) 28 mOhm @ 20A, 10V 4V @ 250µA 36nC @ 10V 2245pF @ 50V 10V ±20V
FDD3672
RFQ
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RFQ
2,297
In-stock
ON Semiconductor MOSFET N-CH 100V 44A D-PAK UltraFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 135W (Tc) N-Channel - 100V 6.5A (Ta), 44A (Tc) 28 mOhm @ 44A, 10V 4V @ 250µA 36nC @ 10V 1710pF @ 25V 6V, 10V ±20V