- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,555
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.1W (Ta), 8.3W (Tc) | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | |||
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VIEW |
3,263
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 40A POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.6W (Ta) | N-Channel | - | 100V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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VIEW |
2,777
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.1W (Ta), 8.3W (Tc) | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | |||
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VIEW |
2,998
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 55A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 2W (Ta) | N-Channel | - | 100V | 55A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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VIEW |
2,575
In-stock
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ON Semiconductor | MOSFET N-CH 100V 44A DPAK-3 | Automotive, AEC-Q101, UltraFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 144W (Tc) | N-Channel | - | 100V | 44A (Tc) | 47 mOhm @ 21A, 6V | 4V @ 250µA | 36nC @ 10V | 1635pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
2,500
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 55A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2W (Ta) | N-Channel | - | 100V | 55A (Tc) | 28 mOhm @ 20A, 10V | 3.3V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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VIEW |
2,438
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 40A POWERDI | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.6W (Ta) | N-Channel | - | 100V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,297
In-stock
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ON Semiconductor | MOSFET N-CH 100V 44A D-PAK | UltraFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 135W (Tc) | N-Channel | - | 100V | 6.5A (Ta), 44A (Tc) | 28 mOhm @ 44A, 10V | 4V @ 250µA | 36nC @ 10V | 1710pF @ 25V | 6V, 10V | ±20V |