- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
739
In-stock
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Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 3.6W (Ta), 89W (Tc) | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | ||||
VIEW |
916
In-stock
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Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 60V | 10A (Ta), 51A (Tc) | 13 mOhm @ 10A, 10V | 4V @ 250µA | 36nC @ 10V | 2380pF @ 30V | 10V | ±20V | ||||
VIEW |
3,138
In-stock
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Texas Instruments | MOSFET N-CH 60V 100A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3.2W (Ta), 116W (Tc) | N-Channel | - | 60V | 17A (Ta), 100A (Tc) | 5.9 mOhm @ 18A, 10V | 2.3V @ 250µA | 36nC @ 10V | 2750pF @ 30V | 4.5V, 10V | ±20V | ||||
VIEW |
995
In-stock
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Infineon Technologies | MOSFET N-CH 60V 50A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 71W (Tc) | N-Channel | - | 60V | 50A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 34µA | 36nC @ 10V | 2900pF @ 30V | 10V | ±20V | ||||
VIEW |
1,830
In-stock
|
Texas Instruments | MOSFET N-CH 60V 17A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3.2W (Ta), 116W (Tc) | N-Channel | - | 60V | 17A (Ta), 100A (Tc) | 5.9 mOhm @ 18A, 10V | 2.3V @ 250µA | 36nC @ 10V | 2750pF @ 30V | 4.5V, 10V | ±20V | ||||
VIEW |
2,073
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 3.6W (Ta), 89W (Tc) | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V |