Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMNH10H028SPSQ-13
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Diodes Incorporated MOSFET N-CH 100V 40A POWERDI506 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.6W (Ta) N-Channel 100V 40A (Tc) 28 mOhm @ 20A, 10V 4V @ 250µA 36nC @ 10V 2245pF @ 50V 10V ±20V
DMNH10H028SPS-13
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2,438
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Diodes Incorporated MOSFET N-CH 100V 40A POWERDI - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.6W (Ta) N-Channel 100V 40A (Tc) 28 mOhm @ 20A, 10V 4V @ 250µA 36nC @ 10V 2245pF @ 50V 10V ±20V
RS1E280GNTB
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3,141
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Rohm Semiconductor MOSFET N-CH 30V 28A 8-HSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 31W (Tc) N-Channel 30V 28A (Ta) 2.6 mOhm @ 28A, 10V 2.5V @ 1mA 36nC @ 10V 2300pF @ 15V 4.5V, 10V ±20V
TSM650N15CR RLG
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3,884
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Taiwan Semiconductor Corporation MOSFET N-CH 150V 24A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 96W (Tc) N-Channel 150V 24A (Tc) 65 mOhm @ 4A, 10V 4V @ 250µA 36nC @ 10V 1829pF @ 75V 6V, 10V ±20V