Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB075N04LGATMA1
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2,575
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Infineon Technologies MOSFET N-CH 40V 50A TO263-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 56W (Tc) N-Channel - 40V 50A (Tc) 7.5 mOhm @ 50A, 10V 2V @ 20µA 36nC @ 10V 2800pF @ 25V 4.5V, 10V ±20V
IPB090N06N3GATMA1
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995
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Infineon Technologies MOSFET N-CH 60V 50A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 71W (Tc) N-Channel - 60V 50A (Tc) 9 mOhm @ 50A, 10V 4V @ 34µA 36nC @ 10V 2900pF @ 30V 10V ±20V
BSZ018NE2LSIATMA1
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3,862
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Infineon Technologies MOSFET N-CH 25V 22A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel - 25V 22A (Ta), 40A (Tc) 1.8 mOhm @ 20A, 10V 2V @ 250µA 36nC @ 10V 2500pF @ 12V 4.5V, 10V ±20V
BSC018NE2LSIATMA1
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3,511
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Infineon Technologies MOSFET N-CH 25V 29A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 69W (Tc) N-Channel - 25V 29A (Ta), 100A (Tc) 1.8 mOhm @ 30A, 10V 2V @ 250µA 36nC @ 10V 2500pF @ 12V 4.5V, 10V ±20V