- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,555
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.1W (Ta), 8.3W (Tc) | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | |||
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VIEW |
882
In-stock
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Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
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VIEW |
3,426
In-stock
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Infineon Technologies | MOSFET N-CH 150V 4.9A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 150V | 4.9A (Ta), 28A (Tc) | 56 mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | 1411pF @ 25V | 10V | ±20V | |||
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VIEW |
739
In-stock
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Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 3.6W (Ta), 89W (Tc) | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | |||
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VIEW |
919
In-stock
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Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
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VIEW |
3,781
In-stock
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Infineon Technologies | MOSFET N-CH 150V 4.9A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 150V | 4.9A (Ta), 28A (Tc) | 56 mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | 1411pF @ 25V | 10V | ±20V | |||
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VIEW |
2,777
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.1W (Ta), 8.3W (Tc) | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | |||
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VIEW |
2,073
In-stock
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Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 3.6W (Ta), 89W (Tc) | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | |||
