Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI7846DP-T1-E3
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3,034
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Vishay Siliconix MOSFET N-CH 150V 4A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel 150V 4A (Ta) 50 mOhm @ 5A, 10V 4.5V @ 250µA 36nC @ 10V - 10V ±20V
SI4488DY-T1-E3
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3,566
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Vishay Siliconix MOSFET N-CH 150V 3.5A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.56W (Ta) N-Channel 150V 3.5A (Ta) 50 mOhm @ 5A, 10V 2V @ 250µA (Min) 36nC @ 10V - 10V ±20V
FDMS86250
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1,852
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ON Semiconductor MOSFET N-CH 150V 6.7A 8-PQFN PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 96W (Tc) N-Channel 150V 6.7A (Ta), 20A (Tc) 25 mOhm @ 6.7A, 10V 4V @ 250µA 36nC @ 10V 2330pF @ 75V 6V, 10V ±20V
TSM650N15CR RLG
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3,884
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Taiwan Semiconductor Corporation MOSFET N-CH 150V 24A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 96W (Tc) N-Channel 150V 24A (Tc) 65 mOhm @ 4A, 10V 4V @ 250µA 36nC @ 10V 1829pF @ 75V 6V, 10V ±20V
SI4488DY-T1-GE3
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RFQ
1,316
In-stock
Vishay Siliconix MOSFET N-CH 150V 3.5A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.56W (Ta) N-Channel 150V 3.5A (Ta) 50 mOhm @ 5A, 10V 2V @ 250µA (Min) 36nC @ 10V - 10V ±20V