- Manufacture :
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- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,763
In-stock
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Infineon Technologies | MOSFET N-CH 100V 35A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 35A (Tc) | 25 mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 50V | 10V | ±20V | ||||
VIEW |
3,751
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | ||||
VIEW |
2,200
In-stock
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Infineon Technologies | MOSFET N-CH 100V 30A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 57W (Tc) | N-Channel | - | 100V | 30A (Tc) | 31 mOhm @ 30A, 10V | 2.4V @ 29µA | 31nC @ 10V | 1976pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,061
In-stock
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Infineon Technologies | MOSFET N-CH 100V 35A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 35A (Tc) | 25 mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 50V | 10V | ±20V | ||||
VIEW |
3,364
In-stock
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ON Semiconductor | MOSFET N-CH 100V 44A D2PAK | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 120W (Tc) | N-Channel | - | 100V | 7.2A (Ta), 44A (Tc) | 28 mOhm @ 44A, 10V | 4V @ 250µA | 31nC @ 10V | 1710pF @ 25V | 6V, 10V | ±20V | ||||
VIEW |
3,636
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | ||||
VIEW |
3,717
In-stock
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ON Semiconductor | MOSFET N-CH 100V 6.2A DPAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3.1W (Ta), 69W (Tc) | N-Channel | - | 100V | 6.2A (Ta) | 36 mOhm @ 5.9A, 10V | 4.5V @ 250µA | 31nC @ 10V | 1740pF @ 50V | 10V | ±20V |