Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 20V 4.2A 8-SOIC HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 4.2A (Ta) 85 mOhm @ 4A, 4.5V 700mV @ 250µA 7.5nC @ 4.5V 310pF @ 15V 2.7V, 4.5V ±12V
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Infineon Technologies MOSFET N-CH 30V 10A 8PQFN HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (3.3x3.3), Power33 2.6W (Ta), 20W (Tc) N-Channel - 30V 10A (Ta) 16 mOhm @ 17A, 10V 2.35V @ 25µA 7.5nC @ 4.5V 560pF @ 25V 4.5V, 10V ±20V