- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
861
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,625
In-stock
|
ON Semiconductor | MOSFET P-CH 30V 3A SOT-223-4 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | - | P-Channel | - | 30V | 3A (Ta) | 180 mOhm @ 3A, 10V | 3V @ 250µA | 25nC @ 10V | 525pF @ 10V | - | - | |||
|
|
VIEW |
3,557
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 5.5A SOT-223-4 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | - | N-Channel | - | 30V | 5.5A (Ta) | 50 mOhm @ 5.5A, 10V | 3V @ 250µA | 25nC @ 10V | 730pF @ 10V | - | - | |||
|
|
VIEW |
3,968
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 6.6A SOT-223 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2.2W (Ta) | N-Channel | - | 100V | 6.6A (Ta) | 28 mOhm @ 6.6A, 10V | 3V @ 250µA | 25nC @ 10V | 1490pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,694
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 30V 3A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.65W (Ta) | P-Channel | - | 30V | 3A (Tc) | 250 mOhm @ 1A, 10V | 2.8V @ 1mA | 25nC @ 10V | 250pF @ 20V | 10V | ±20V | |||
|
|
VIEW |
2,091
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 30V 3A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.65W (Ta) | P-Channel | - | 30V | 3A (Tc) | 250 mOhm @ 1A, 10V | 2.8V @ 1mA | 25nC @ 10V | 250pF @ 20V | 10V | ±20V | |||
|
|
VIEW |
1,895
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
