- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
,%20SC-63.JPG)
|
VIEW |
791
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 12A DPAK | QFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 44W (Tc) | P-Channel | - | 60V | 12A (Tc) | 135 mOhm @ 6A, 10V | 4V @ 250µA | 27nC @ 10V | 900pF @ 25V | 10V | ±25V | |||
|
|
VIEW |
1,719
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 12A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 44W (Tc) | P-Channel | - | 60V | 12A (Tc) | 135 mOhm @ 6A, 10V | 4V @ 250µA | 27nC @ 10V | 900pF @ 25V | 10V | ±25V | |||
|
VIEW |
3,223
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 19A 8TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 69W (Tc) | N-Channel | - | 60V | 17A (Ta), 40A (Tc) | 4.2 mOhm @ 20A, 10V | 2.8V @ 36µA | 27nC @ 10V | 2000pF @ 30V | 6V, 10V | ±20V | |||
|
VIEW |
1,336
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 6.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.8W (Ta) | N-Channel | - | 60V | 6.2A (Ta) | 22 mOhm @ 10.3A, 10V | 3V @ 250µA | 27nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
920
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 6.1A 8-SOIC | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 5W (Ta) | N-Channel | - | 60V | 6.1A (Ta) | 35 mOhm @ 6.1A, 10V | 3V @ 250µA | 27nC @ 10V | 1310pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,491
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 6.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.8W (Ta) | N-Channel | - | 60V | 6.2A (Ta) | 22 mOhm @ 10.3A, 10V | 3V @ 250µA | 27nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
2,903
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 19A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | N-Channel | - | 60V | 19A (Ta), 100A (Tc) | 3.9 mOhm @ 50A, 10V | 2.8V @ 36µA | 27nC @ 10V | 2000pF @ 30V | 6V, 10V | ±20V | |||
