- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,290
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 2.4A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 1.7W (Ta) | P-Channel | - | 20V | 2.4A (Ta) | 200 mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 8.8nC @ 4.5V | 210pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
VIEW |
1,731
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 2.4A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | P-Channel | - | 20V | 2.4A (Ta) | 200 mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 8.8nC @ 4.5V | 210pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
2,872
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 2.6A 4-WLCSP | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, WLCSP | 4-WLCSP (0.8x0.8) | 1.3W (Ta) | P-Channel | - | 20V | 2.6A (Ta) | 140 mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.8nC @ 4.5V | 555pF @ 10V | 1.5V, 4.5V | ±8V | |||
