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- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,096
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 5A VS-6 | U-MOSIII-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 30V | 5A (Ta) | 59 mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | 490pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
2,422
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
969
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A VS-8 | U-MOSIII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 12V | 6A (Ta) | 28 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18nC @ 5V | 1600pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,474
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F UF6 S-MOS (LF) TRANSIST | U-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | P-Channel | - | 20V | 2.5A (Ta) | 64 mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | - | 800pF @ 10V | 2V, 4.5V | ±10V | ||||
VIEW |
3,175
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 9.2A 6-DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUDFN | U-DFN2523-6 | 1W (Ta) | P-Channel | - | 20V | 9.2A (Ta) | 16 mOhm @ 3.6A, 4.5V | 1.2V @ 200µA | 113nC @ 10V | 4748pF @ 10V | 1.5V, 4.5V | ±12V | ||||
VIEW |
3,748
In-stock
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Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 78W (Tc) | N-Channel | - | 20V | 25A (Ta), 100A (Tc) | 2.6 mOhm @ 50A, 4.5V | 1.2V @ 200µA | 52.7nC @ 4.5V | 7800pF @ 10V | 2.5V, 4.5V | ±12V |