- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 125 mOhm @ 2.6A, 10V (2)
- 14 mOhm @ 38A, 10V (1)
- 17.8 mOhm @ 7.5A, 10V (1)
- 19.5 mOhm @ 4A, 10V (1)
- 28 mOhm @ 5A, 10V (1)
- 3.3 mOhm @ 50A, 10V (2)
- 36 mOhm @ 4A, 10V (2)
- 36 mOhm @ 5A, 10V (1)
- 38 mOhm @ 4A, 10V (1)
- 4.9 mOhm @ 42A, 10V (1)
- 6.8 mOhm @ 50A, 10V (1)
- 69 mOhm @ 2A, 10V (3)
- 90 mOhm @ 9A, 12V (1)
- 95 mOhm @ 2A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
19 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,906
In-stock
|
ON Semiconductor | MOSFET N-CH 59V 2.6A SOT223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.69W (Ta) | N-Channel | - | 59V | 2.6A (Ta) | 125 mOhm @ 2.6A, 10V | 2.5V @ 100µA | 7nC @ 4.5V | 250pF @ 35V | 3V, 10V | ±15V | |||
|
|
VIEW |
3,059
In-stock
|
ON Semiconductor | MOSFET N-CH 52V 2.6A SOT223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.69W (Ta) | N-Channel | - | 52V | 2.6A (Ta) | 125 mOhm @ 2.6A, 10V | 2.5V @ 100µA | 7nC @ 4.5V | 250pF @ 35V | 3V, 10V | ±15V | |||
|
VIEW |
649
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 26A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 40V | 26A (Ta), 85A (Tc) | 3.3 mOhm @ 50A, 10V | 2.5V @ 100µA | 58nC @ 4.5V | 3720pF @ 25V | 4.5V, 10V | ±16V | |||
|
VIEW |
826
In-stock
|
ON Semiconductor | MOSFET N-CH 52V 9A LL DPAK-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.74W (Ta) | N-Channel | - | 52V | 9A (Ta) | 90 mOhm @ 9A, 12V | 2.5V @ 100µA | 7nC @ 4.5V | 250pF @ 40V | 3V, 12V | ±15V | |||
|
VIEW |
3,642
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 15A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 46W (Tc) | N-Channel | - | 40V | 15A (Ta) | 17.8 mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10nC @ 10V | 610pF @ 10V | 4.5V, 10V | ±20V | |||
.jpg)
|
VIEW |
1,368
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,924
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 40V | 42A (Tc) | 4.9 mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | 3810pF @ 25V | 4.5V, 10V | ±16V | |||
|
VIEW |
2,468
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1.8W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,578
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
2,922
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,466
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1.8W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
703
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 50A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V | |||
|
VIEW |
1,314
In-stock
|
Toshiba Semiconductor and Storage | SMALL-SIGNAL NCH MOSFET SOT23F Q | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,515
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6A | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
2,360
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 6A SOT-23F | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 6A (Ta) | 38 mOhm @ 4A, 10V | 2.5V @ 100µA | 2.7nC @ 4.5V | 340pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,281
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 6A 2-3Z1A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 5A, 10V | 2.5V @ 100µA | 3.4nC @ 4.5V | 436pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,178
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
901
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 26A 8PQFN | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 40V | 26A (Ta), 85A (Tc) | 3.3 mOhm @ 50A, 10V | 2.5V @ 100µA | 58nC @ 4.5V | 3720pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,247
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A SOT23F | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 3A (Ta) | 95 mOhm @ 2A, 10V | 2.5V @ 100µA | 1.7nC @ 4.5V | 126pF @ 15V | 4.5V, 10V | ±20V | |||
