Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET P-CHAN 30V POWERPAK 1212- TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 3.8W (Ta), 52.1W (Tc) P-Channel - 30V 14.4A (Ta), 35A (Tc) 11.4 mOhm @ 14.4A, 10V 2.8V @ 250µA 71nC @ 10V 3345pF @ 15V 4.5V, 10V ±20V
DMT10H010LSS-13
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Diodes Incorporated MOSFET N-CH 100V SO-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.4W (Ta) N-Channel - 100V 11.5A (Ta), 29.5A (Tc) 9.5 mOhm @ 13A, 10V 2.8V @ 250µA 71nC @ 10V 3000pF @ 50V 4.5V, 10V ±20V
SI7143DP-T1-GE3
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2,774
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Vishay Siliconix MOSFET P-CH 30V 35A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 4.2W (Ta), 35.7W (Tc) P-Channel - 30V 35A (Tc) 10 mOhm @ 16.1A, 10V 2.8V @ 250µA 71nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V
SI7129DN-T1-GE3
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Vishay Siliconix MOSFET P-CH 30V 35A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.8W (Ta), 52.1W (Tc) P-Channel - 30V 35A (Tc) 11.4 mOhm @ 14.4A, 10V 2.8V @ 250µA 71nC @ 10V 3345pF @ 15V 4.5V, 10V ±20V