Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NDT452AP
RFQ
VIEW
RFQ
2,112
In-stock
ON Semiconductor MOSFET P-CH 30V 5A SOT-223-4 - Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) P-Channel - 30V 5A (Ta) 65 mOhm @ 5A, 10V 2.8V @ 250µA 30nC @ 10V 690pF @ 15V 4.5V, 10V ±20V
STN3NF06L
RFQ
VIEW
RFQ
1,360
In-stock
STMicroelectronics MOSFET N-CH 60V 4A SOT223 STripFET™ II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3.3W (Tc) N-Channel - 60V 4A (Tc) 100 mOhm @ 1.5A, 10V 2.8V @ 250µA 9nC @ 5V 340pF @ 25V 5V, 10V ±16V
STN4NF06L
RFQ
VIEW
RFQ
1,410
In-stock
STMicroelectronics MOSFET N-CH 60V 4A SOT-223 STripFET™ II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3.3W (Tc) N-Channel - 60V 4A (Tc) 100 mOhm @ 1.5A, 10V 2.8V @ 250µA 9nC @ 5V 340pF @ 25V 5V, 10V ±16V
FDT1600N10ALZ
RFQ
VIEW
RFQ
3,654
In-stock
ON Semiconductor MOSFET N-CH 100V SOT-223-4 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 10.42W (Tc) N-Channel - 100V 5.6A (Tc) 160 mOhm @ 2.8A, 10V 2.8V @ 250µA 3.77nC @ 10V 225pF @ 50V 5V, 10V ±20V