- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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,%20SC-63.jpg)
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VIEW |
3,950
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 37.1A TO252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 8.3W (Ta), 136W (Tc) | P-Channel | - | 100V | 37.1A (Tc) | 43 mOhm @ 9.2A, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
3,866
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 16.9A TO-252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 2.1W (Ta), 41.7W (Tc) | N-Channel | - | 100V | 16.9A (Tc) | 66 mOhm @ 6.6A, 10V | 3V @ 250µA | 30nC @ 10V | 860pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
3,877
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.4A DPAK | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 1.7W (Ta), 20.8W (Tc) | P-Channel | - | 60V | 8.4A (Tc) | 155 mOhm @ 5A, 10V | 3V @ 250µA | 19nC @ 10V | 450pF @ 25V | 4.5V, 10V | ±20V | |||
