- Series :
- Part Status :
- Supplier Device Package :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,108
In-stock
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Infineon Technologies | MOSFET P-CH 12V 8.9A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | 12V | 8.9A (Ta) | 24 mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
832
In-stock
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Infineon Technologies | MOSFET P-CH 12V 16A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | 12V | 16A (Ta) | 7 mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | 8676pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,020
In-stock
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Infineon Technologies | MOSFET P-CH 12V 16A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | 12V | 16A (Ta) | 7 mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | 8676pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,326
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET P-CH 12V 20A 8DFN | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-DFN (2x2) | 5W (Ta) | P-Channel | 12V | 20A (Ta) | 8 mOhm @ 12A, 4.5V | 900mV @ 250µA | 30nC @ 4.5V | 2180pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,603
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 3A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 750mW (Ta) | P-Channel | 12V | 3A (Ta) | 50 mOhm @ 3.85A, 4.5V | 900mV @ 250µA | 15nC @ 4.5V | 715pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,991
In-stock
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Nexperia USA Inc. | MOSFET P-CH 12V 8.2A 6DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | P-Channel | 12V | 8.2A (Ta) | 19 mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 100nC @ 4.5V | 2875pF @ 6V | 1.8V, 4.5V | ±12V | |||
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VIEW |
3,053
In-stock
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Infineon Technologies | MOSFET P-CH 12V 11.5A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | 12V | 11.5A (Tc) | 14 mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | 3529pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,402
In-stock
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Nexperia USA Inc. | MOSFET P-CH 12V 6WLCSP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | 6-WLCSP (1.48x.98) | 556mW (Ta), 12.5W (Tc) | P-Channel | 12V | 6.2A (Ta) | 25 mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4nC @ 4.5V | 1400pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
828
In-stock
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Nexperia USA Inc. | MOSFET P-CH 12V WLCSP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, WLCSP | 4-WLCSP (2x2) | 400mW (Ta), 12.5W (Tc) | P-Channel | 12V | 3.9A (Ta) | 65 mOhm @ 3A, 4.5V | 900mV @ 250µA | 10nC @ 4.5V | 415pF @ 6V | 1.8V, 4.5V | ±8V | |||
