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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,773
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,348
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,843
In-stock
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ON Semiconductor | MOSFET P-CH 20V 8-SOIC | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 3.5A (Ta) | 130 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V | |||
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VIEW |
2,667
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.5A 6-WFDN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 700mW (Ta) | P-Channel | - | 20V | 3.5A (Ta) | 40 mOhm @ 3A, 4.5V | 1V @ 250µA | 15.7nC @ 4.5V | 1329pF @ 16V | 1.5V, 4.5V | ±8V | |||
-Exposed-Pad.jpg)
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VIEW |
3,405
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 60V 3.5A 8SOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 3W (Ta) | P-Channel | - | 60V | 3.5A (Ta) | 155 mOhm @ 3.5A, 10V | 1V @ 250µA | 6nC @ 10V | 540pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
2,740
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 3.5A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 1W (Ta) | N-Channel | - | 20V | 3.5A (Ta) | 55 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 872pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
908
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.5A 8SOIC | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 3.5A (Ta) | 130 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 405pF @ 10V | 2.5V, 4.5V | ±8V | |||
