Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
1,487
In-stock
ON Semiconductor -60V7.7MOHMSINGLE Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN, 5 Leads 5-DFN (5x6) (8-SOFL) 3.8W (Ta), 200W (Tc) P-Channel - 60V 15A (Ta), 100A (Tc) 7.7 mOhm @ 50A, 10V 2.6V @ 1mA 160nC @ 10V 7700pF @ 20V 4.5V, 10V ±20V
BSC077N12NS3GATMA1
RFQ
VIEW
RFQ
764
In-stock
Infineon Technologies MOSFET N-CH 120V 98A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 139W (Tc) N-Channel - 120V 13.4A (Ta), 98A (Tc) 7.7 mOhm @ 50A, 10V 4V @ 110µA 88nC @ 10V 5700pF @ 60V 10V ±20V