Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFH5250DTR2PBF
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607
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Infineon Technologies MOSFET N-CH 25V 40A 8VQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN PQFN (5x6) Single Die 3.6W (Ta), 156W (Tc) N-Channel - 25V 40A (Ta), 100A (Tc) 1.4 mOhm @ 50A, 10V 2.35V @ 150µA 83nC @ 10V 6115pF @ 13V 4.5V, 10V ±20V
IRFH5300TR2PBF
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3,026
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Infineon Technologies MOSFET N-CH 30V 40A PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) Single Die 3.6W (Ta), 250W (Tc) N-Channel - 30V 40A (Ta), 100A (Tc) 1.4 mOhm @ 50A, 10V 2.35V @ 150µA 120nC @ 10V 7200pF @ 15V 4.5V, 10V ±20V
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2,350
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Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 3W (Ta), 115W (Tc) N-Channel - 40V 33A (Ta), 100A (Tc) 1.4 mOhm @ 50A, 10V 2V @ 250µA 85nC @ 10V 6020pF @ 20V 4.5V, 10V ±20V
IRFH5250DTRPBF
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1,866
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Infineon Technologies MOSFET N-CH 25V 40A 8VQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) Single Die 3.6W (Ta), 156W (Tc) N-Channel - 25V 40A (Ta), 100A (Tc) 1.4 mOhm @ 50A, 10V 2.35V @ 150µA 83nC @ 10V 6115pF @ 13V 4.5V, 10V ±20V
IRFH5300TRPBF
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RFQ
3,037
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Infineon Technologies MOSFET N-CH 30V 40A PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 250W (Tc) N-Channel - 30V 40A (Ta), 100A (Tc) 1.4 mOhm @ 50A, 10V 2.35V @ 150µA 120nC @ 10V 7200pF @ 15V 4.5V, 10V ±20V
BSC014N04LSATMA1
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2,016
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Infineon Technologies MOSFET N-CH 40V 32A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN SuperSO8 2.5W (Ta), 96W (Tc) N-Channel - 40V 32A (Ta), 100A (Tc) 1.4 mOhm @ 50A, 10V 2V @ 250µA 61nC @ 10V 4300pF @ 20V 4.5V, 10V ±20V