- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
924
In-stock
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ON Semiconductor | MOSFET N-CH 60V 43A DPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 71W (Tc) | N-Channel | - | 60V | 43A (Tc) | 18 mOhm @ 20A, 10V | 4V @ 250µA | 23nC @ 10V | 1261pF @ 25V | 10V | ±20V | |||
|
VIEW |
959
In-stock
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Infineon Technologies | MOSFET P-CH 30V 39.6A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 40W (Tc) | P-Channel | - | 30V | 9A (Ta), 39.5A (Tc) | 18 mOhm @ 20A, 10V | 3.1V @ 48µA | 30nC @ 10V | 2220pF @ 15V | 6V, 10V | ±25V | |||
|
VIEW |
3,891
In-stock
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Nexperia USA Inc. | MOSFET N-CH 75V 48.2A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 106W (Tc) | N-Channel | - | 75V | 48.2A (Tc) | 18 mOhm @ 20A, 10V | 2.15V @ 1mA | 30nC @ 5V | 3096pF @ 25V | 5V, 10V | ±15V | |||
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|
VIEW |
3,433
In-stock
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Nexperia USA Inc. | MOSFET N-CH 55V 47.4A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 85W (Tc) | N-Channel | - | 55V | 47.4A (Tc) | 18 mOhm @ 20A, 10V | 4V @ 1mA | 21.9nC @ 10V | 1263pF @ 25V | 10V | ±20V | |||
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VIEW |
1,685
In-stock
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Vishay Siliconix | MOSFET N-CH 150V 53.7A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | - | 150V | 53.7A (Tc) | 18 mOhm @ 20A, 10V | 4.5V @ 250µA | 47nC @ 10V | 1286pF @ 75V | 7.5V, 10V | ±20V | |||
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|
VIEW |
1,746
In-stock
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Vishay Siliconix | MOSFET N-CH 150V 53.7A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | 6.25W (Ta), 104W (Tc) | N-Channel | - | 150V | 53.7A (Tc) | 18 mOhm @ 20A, 10V | 3.5V @ 250µA | 64nC @ 10V | 2130pF @ 75V | 10V | ±20V | |||
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|
VIEW |
681
In-stock
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Nexperia USA Inc. | MOSFET N-CH 75V 49A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 105W (Tc) | N-Channel | - | 75V | 49A (Tc) | 18 mOhm @ 20A, 10V | 4V @ 1mA | 35nC @ 10V | 2173pF @ 25V | 10V | ±20V | |||
