- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,725
In-stock
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Texas Instruments | MOSFET N-CH 100V 200A TO263 | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | DDPAK/TO-263-3 | 375W (Tc) | N-Channel | - | 100V | 200A (Ta) | 2.4 mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | 12000pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,525
In-stock
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Infineon Technologies | MOSFET P-CH 40V 180A TO263-7 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 150W (Tc) | P-Channel | - | 40V | 180A (Tc) | 2.4 mOhm @ 100A, 10V | 2.2V @ 410µA | 286nC @ 10V | 18700pF @ 25V | 4.5V, 10V | ±16V | |||
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|
VIEW |
1,766
In-stock
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Texas Instruments | MOSFET N-CH 100V 200A TO263 | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | DDPAK/TO-263-3 | 375W (Tc) | N-Channel | - | 100V | 200A (Ta) | 2.4 mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | 12000pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,176
In-stock
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Infineon Technologies | MOSFET N CH 60V 195A D2PAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | D²PAK (TO-263AB) | 294W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,847
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A TO263-3-2 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 115W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 70µA | 90nC @ 10V | 7180pF @ 25V | 10V | ±20V | |||
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VIEW |
2,375
In-stock
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ON Semiconductor | MOSFET N-CH 80V 120A D2PAK7 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | D²PAK (TO-263) | 246W (Tc) | N-Channel | - | 80V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4.5V @ 250µA | 178nC @ 10V | 13530pF @ 40V | 10V | ±20V | |||
