Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
CSD17577Q5AT
RFQ
VIEW
RFQ
2,969
In-stock
Texas Instruments MOSFET N-CH 30V 60A 8VSON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-VSONP (3x3.15) 3W (Ta), 53W (Tc) N-Channel - 30V 60A (Ta) 4.2 mOhm @ 18A, 10V 1.8V @ 250µA 35nC @ 10V 2310pF @ 15V 4.5V, 10V ±20V
CSD17577Q5A
RFQ
VIEW
RFQ
921
In-stock
Texas Instruments MOSFET N-CH 30V 60A 8VSON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-VSONP (3x3.15) 3W (Ta), 53W (Tc) N-Channel - 30V 60A (Ta) 4.2 mOhm @ 18A, 10V 1.8V @ 250µA 35nC @ 10V 2310pF @ 15V 4.5V, 10V ±20V
FDS8870
RFQ
VIEW
RFQ
2,373
In-stock
ON Semiconductor MOSFET N-CH 30V 18A 8SOIC PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 18A (Ta) 4.2 mOhm @ 18A, 10V 2.5V @ 250µA 112nC @ 10V 4615pF @ 15V 4.5V, 10V ±20V