Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM160P04LCRHRLG
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967
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Taiwan Semiconductor Corporation MOSFET P-CH 40V 51A 8PDFN Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 69W (Tc) P-Channel - 40V 51A (Tc) 16 mOhm @ 10A, 10V 2.5V @ 250µA 48nC @ 10V 2712pF @ 20V 4.5V, 10V ±20V
DMT6015LSS-13
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3,517
In-stock
Diodes Incorporated MOSFET N-CHA 60V 9.2A SO8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) N-Channel - 60V 9.2A (Ta) 16 mOhm @ 10A, 10V 2.5V @ 250µA 18.9nC @ 30V 1103pF @ 30V 4.5V, 10V ±16V
DMT6015LPS-13
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2,314
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Diodes Incorporated MOSFET BVDSS: 41V 60V POWERDI506 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.16W (Ta) N-Channel - 60V 10.6A (Ta), 31A (Tc) 16 mOhm @ 10A, 10V 2.5V @ 250µA 18.9nC @ 10V 1103pF @ 30V 4.5V, 10V ±16V
SI4776DY-T1-GE3
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VIEW
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678
In-stock
Vishay Siliconix MOSFET N-CHANNEL 30V 11.9A 8SO SkyFET®, TrenchFET® Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 4.1W (Tc) N-Channel - 30V 11.9A (Tc) 16 mOhm @ 10A, 10V 2.3V @ 1mA 17.5nC @ 10V 521pF @ 15V 4.5V, 10V ±20V
DMT6016LPS-13
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2,037
In-stock
Diodes Incorporated MOSFET N-CH 60V 10.6A POWERDI - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.23W (Ta) N-Channel - 60V 10.6A (Ta) 16 mOhm @ 10A, 10V 2.5V @ 250µA 17nC @ 10V 864pF @ 30V 4.5V, 10V ±20V
DMT6016LFDF-7
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2,325
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Diodes Incorporated MOSFET N-CH 60V 8.9A 6UDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 6-UDFN (2x2) 820mW (Ta) N-Channel - 60V 8.9A (Ta) 16 mOhm @ 10A, 10V 3V @ 250µA 17nC @ 10V 864pF @ 30V 4.5V, 10V ±20V
BUK6218-40C,118
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1,629
In-stock
Nexperia USA Inc. MOSFET N-CH 40V 42A DPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 40V 42A (Tc) 16 mOhm @ 10A, 10V 2.8V @ 1mA 22nC @ 10V 1170pF @ 25V 10V ±16V