Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLR8726TRLPBF
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VIEW
RFQ
723
In-stock
Infineon Technologies MOSFET N-CH 30V 86A DPAK HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 75W (Tc) N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V
BUK9606-55A,118
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RFQ
3,161
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 75A D2PAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 55V 75A (Tj) 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 4.5V, 10V ±15V
IPC50N04S55R8ATMA1
RFQ
VIEW
RFQ
2,903
In-stock
Infineon Technologies MOSFET N-CHANNEL 40V 50A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 42W (Tc) N-Channel - 40V 50A (Tc) 5.8 mOhm @ 25A, 10V 3.4V @ 13µA 18nC @ 10V 1090pF @ 25V 7V, 10V ±20V
IRLR8726TRPBF
RFQ
VIEW
RFQ
2,820
In-stock
Infineon Technologies MOSFET N-CH 30V 86A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 75W (Tc) N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V