Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,950
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Vishay Siliconix MOSFET N-CHAN 600V EL Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 208W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 82nC @ 10V 1757pF @ 100V 10V ±30V
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2,737
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Vishay Siliconix MOSFET N-CHAN 600V EL Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 208W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 82nC @ 10V 1757pF @ 100V 10V ±30V
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686
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Vishay Siliconix MOSFET N-CHAN 600V EL Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 82nC @ 10V 1757pF @ 100V 10V ±30V
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3,412
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Vishay Siliconix MOSFET N-CH 600V 21A TO263 E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 227W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 86nC @ 10V 1920pF @ 100V 10V ±30V
SIHB22N65E-GE3
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3,044
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Vishay Siliconix MOSFET N-CH 650V 22A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 227W (Tc) N-Channel - 650V 22A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 110nC @ 10V 2415pF @ 100V 10V ±30V
IRF640STRRPBF
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2,728
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Vishay Siliconix MOSFET N-CH 200V 18A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 3.1W (Ta), 130W (Tc) N-Channel - 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 10V ±20V
SIHH21N65EF-T1-GE3
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3,287
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Vishay Siliconix MOSFET N-CH 650V 19.8A POWERPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 156W (Tc) N-Channel - 650V 19.8A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 102nC @ 10V 2396pF @ 100V 10V ±30V
IRF640STRLPBF
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3,106
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Vishay Siliconix MOSFET N-CH 200V 18A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 3.1W (Ta), 130W (Tc) N-Channel - 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 10V ±20V
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3,148
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Vishay Siliconix MOSFET N-CHAN 600V EL Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 208W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 82nC @ 10V 1757pF @ 100V 10V ±30V
SIHF22N60E-GE3
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3,207
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Vishay Siliconix MOSFET N-CH 600V 21A TO220 E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 86nC @ 10V 1920pF @ 100V 10V ±30V
SIHP22N60E-GE3
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2,363
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Vishay Siliconix MOSFET N-CH 600V 21A TO220AB E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 - 227W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 86nC @ 10V 1920pF @ 100V 10V ±30V