- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,176
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 90A D2PAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.75W (Ta), 300W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4.4 mOhm @ 20A, 10V | 4.5V @ 250µA | 160nC @ 10V | 6190pF @ 30V | 10V | ±20V | |||
|
VIEW |
870
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 28A 8DFN | - | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 5W (Ta), 46W (Tc) | N-Channel | - | 30V | 28A (Ta), 32A (Tc) | 4.4 mOhm @ 20A, 10V | 2.2V @ 250µA | 42nC @ 10V | 2160pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,967
In-stock
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Infineon Technologies | MOSFET N-CH 30V 15A 8TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 27W (Tc) | N-Channel | - | 30V | 15A (Ta), 40A (Tc) | 4.4 mOhm @ 20A, 10V | 2V @ 250µA | 15nC @ 10V | 950pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,153
In-stock
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Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
831
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 35A 1212-8S | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 52W (Tc) | P-Channel | - | 20V | 35A (Tc) | 4.4 mOhm @ 20A, 10V | 1.5V @ 250µA | 183nC @ 10V | 5590pF @ 10V | 2.5V, 10V | ±12V | |||
