Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SPB12N50C3ATMA1
RFQ
VIEW
RFQ
1,690
In-stock
Infineon Technologies MOSFET N-CH 560V 11.6A TO-263 CoolMOS™ Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 125W (Tc) N-Channel - 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 10V ±20V
SI4487DY-T1-GE3
RFQ
VIEW
RFQ
3,513
In-stock
Vishay Siliconix MOSFET P-CH 30V 11.6A 8-SOIC TrenchFET® Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5W (Tc) P-Channel - 30V 11.6A (Tc) 20.5 mOhm @ 10A, 10V 2.5V @ 250µA 36nC @ 10V 1075pF @ 15V 4.5V, 10V ±25V