Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDMB668P
RFQ
VIEW
RFQ
3,867
In-stock
ON Semiconductor MOSFET P-CH 20V 6.1A MICROFET8 PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP, MicroFET (3x1.9) 1.9W (Ta) P-Channel 20V 6.1A (Ta) 35 mOhm @ 6.1A, 4.5V 1V @ 250µA 59nC @ 10V 2085pF @ 10V 1.8V, 4.5V ±8V
PMPB27EP,115
RFQ
VIEW
RFQ
2,545
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 6.1A 6DFN - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 6-DFN2020MD (2x2) 1.7W (Ta), 12.5W (Tc) P-Channel 30V 6.1A (Ta) 29 mOhm @ 6.1A, 10V 2.5V @ 250µA 45nC @ 10V 1570pF @ 15V 4.5V, 10V ±20V