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- Vgs(th) (Max) @ Id :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,675
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | - | 4.5V | ±12V | |||
|
VIEW |
3,772
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
975
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | - | 4.5V | ±12V | |||
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VIEW |
717
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | - | 4.5V | ±12V | |||
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|
VIEW |
2,443
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 1V @ 250µA | 14nC @ 4.5V | - | 4.5V | ±20V | |||
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|
VIEW |
2,142
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 4.5V | - | 4.5V | ±20V | |||
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VIEW |
3,461
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 8.3A 8-SOIC | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.56W (Ta) | N-Channel | - | 20V | 8.3A (Ta) | 20 mOhm @ 11A, 4.5V | 700mV @ 250µA | 18.9nC @ 4.5V | 1900pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
2,434
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | - | 4.5V | ±20V | |||
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|
VIEW |
1,094
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 8.3A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.2W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 16 mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,742
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 6TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 17.5 mOhm @ 8.3A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1010pF @ 25V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,318
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | |||
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|
VIEW |
715
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | - | 4.5V | ±12V | |||
