- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,034
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 4.3A 6-TSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.1W (Ta) | P-Channel | - | 20V | 4.3A (Ta) | 42 mOhm @ 5.6A, 4.5V | 850mV @ 250µA | 18nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
|
VIEW |
926
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 4.3A 1212-8 PPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.3W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 4.3A (Ta) | 48 mOhm @ 6.3A, 4.5V | 1V @ 800µA | 18nC @ 4.5V | - | 1.8V, 4.5V | ±12V | |||
|
VIEW |
3,881
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 4.3A SOT-23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 1.4W (Ta) | N-Channel | - | 20V | 4.3A (Ta) | 53 mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | - | 325pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
644
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 4.3A 1206-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.3W (Ta) | P-Channel | - | 30V | 4.3A (Ta) | 45 mOhm @ 4.3A, 10V | 3V @ 250µA | 24nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
3,231
In-stock
|
Infineon Technologies | MOSFET P-CH 12V 4.3A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 12V | 4.3A (Ta) | 50 mOhm @ 4.3A, 4.5V | 950mV @ 250µA | 15nC @ 5V | 830pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,576
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 4.3A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 4.3A (Ta) | 100 mOhm @ 2A, 10V | 3V @ 250µA | 40nC @ 10V | 1425pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,758
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 4.3A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Gull Wing | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 4.3A (Ta) | 100 mOhm @ 2A, 10V | - | 40nC @ 10V | 1425pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,582
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 4.3A 1206-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.3W (Ta) | P-Channel | - | 30V | 4.3A (Ta) | 45 mOhm @ 4.3A, 10V | 3V @ 250µA | 24nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
3,838
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 4.3A MICRO8 | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 4.3A (Ta) | 55 mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | 1066pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,013
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 4.3A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 4.3A (Ta) | 90 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2.7V, 4.5V | ±12V |