- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,540
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 500V 5.6A TO252 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 90W (Tc) | N-Channel | - | 500V | 5.6A (Ta) | 1.4 Ohm @ 2.8A, 10V | 4V @ 250µA | 25nC @ 10V | 900pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,678
In-stock
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ON Semiconductor | MOSFET P-CH 20V 5.6A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2.5W (Ta) | P-Channel | - | 20V | 5.6A (Ta) | 75 mOhm @ 3A, 10V | 2V @ 250µA | 46nC @ 10V | 1400pF @ 16V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,649
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 5.6A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.25W (Ta) | P-Channel | - | 20V | 5.6A (Ta) | 25 mOhm @ 7.1A, 4.5V | 850mV @ 250µA | 40nC @ 4.5V | - | 2.5V, 4.5V | ±9V | |||
|
VIEW |
3,152
In-stock
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Infineon Technologies | MOSFET P-CH 20V 5.6A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 2W (Ta) | P-Channel | - | 20V | 5.6A (Ta) | 50 mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 16nC @ 5V | 1079pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,689
In-stock
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Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.8W (Ta) | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,600
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
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|
VIEW |
1,204
In-stock
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Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.8W (Ta) | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,636
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 5.6A 8-SOIC | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.9W (Ta) | P-Channel | - | 30V | 5.6A (Ta) | 40 mOhm @ 4.2A, 10V | 1V @ 250µA | 29.6nC @ 10V | 1022pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,866
In-stock
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Infineon Technologies | MOSFET P-CH 20V 5.6A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | P-Channel | - | 20V | 5.6A (Ta) | 50 mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 16nC @ 5V | 1079pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
3,886
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 5.6A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | - | 60V | 5.6A (Ta) | 25 mOhm @ 8.7A, 10V | 3V @ 250µA | 25nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
3,402
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 5.6A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.8W (Ta) | N-Channel | - | 30V | 5.6A (Ta) | 29 mOhm @ 3.2A, 10V | 2V @ 250µA | 11.3nC @ 10V | 498pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,724
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 5.6A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | - | 60V | 5.6A (Ta) | 25 mOhm @ 8.7A, 10V | 3V @ 250µA | 25nC @ 10V | - | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,447
In-stock
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ON Semiconductor | MOSFET P-CH 20V 5.6A 8-SOIC | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2.5W (Ta) | P-Channel | - | 20V | 5.6A (Ta) | 75 mOhm @ 3A, 10V | 2V @ 250µA | 46nC @ 10V | 1400pF @ 16V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,785
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
