Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD60R2K1CEBTMA1
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2,966
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Infineon Technologies MOSFET N-CH 600V TO-252-3 CoolMOS™ CE Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3 22W (Tc) N-Channel - 600V 2.3A (Tc) 2.1 Ohm @ 760mA, 10V 3.5V @ 60µA 6.7nC @ 10V 140pF @ 100V 10V ±20V
STD3NK50ZT4
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2,722
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STMicroelectronics MOSFET N-CH 500V 2.3A DPAK SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 500V 2.3A (Tc) 3.3 Ohm @ 1.15A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
IPD60R2K1CEAUMA1
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1,806
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Infineon Technologies MOSFET N-CH 600V 2.3A TO-252-3 CoolMOS™ CE Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 38W (Tc) N-Channel - 600V 2.3A (Tc) 2.1 Ohm @ 760mA, 10V 3.5V @ 60µA 6.7nC @ 10V 140pF @ 100V 10V ±20V
SI2324DS-T1-GE3
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3,345
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Vishay Siliconix MOSFET N-CH 100V 2.3A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 - 1.25W (Ta), 2.5W (Tc) N-Channel - 100V 2.3A (Tc) 234 mOhm @ 1.5A, 10V 2.9V @ 250µA 10.4nC @ 10V 190pF @ 50V 10V ±20V
SI2308BDS-T1-E3
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3,108
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Vishay Siliconix MOSFET N-CH 60V 2.3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.09W (Ta), 1.66W (Tc) N-Channel - 60V 2.3A (Tc) 156 mOhm @ 1.9A, 10V 3V @ 250µA 6.8nC @ 10V 190pF @ 30V 4.5V, 10V ±20V
SI2308BDS-T1-GE3
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3,964
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Vishay Siliconix MOSFET N-CH 60V 2.3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.09W (Ta), 1.66W (Tc) N-Channel - 60V 2.3A (Tc) 156 mOhm @ 1.9A, 10V 3V @ 250µA 6.8nC @ 10V 190pF @ 30V 4.5V, 10V ±20V
SQ2308CES-T1_GE3
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1,779
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Vishay Siliconix MOSFET N-CH 60V 2.3A Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 (TO-236AB) 2W (Tc) N-Channel - 60V 2.3A (Tc) 150 mOhm @ 2.3A, 10V 2.5V @ 250µA 5.3nC @ 10V 205pF @ 30V 4.5V, 10V ±20V