- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
677
In-stock
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ON Semiconductor | MOSFET N-CH 500V 5A DPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 83W (Tc) | N-Channel | 500V | 4.7A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 18.5nC @ 10V | 530pF @ 25V | 10V | ±30V | ||||
VIEW |
1,429
In-stock
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NXP USA Inc. | MOSFET N-CH 30V 4.7A SOT-23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 280mW (Tj) | N-Channel | 30V | 4.7A (Tc) | 55 mOhm @ 2A, 10V | 2V @ 1mA | 9.4nC @ 10V | 350pF @ 30V | 4.5V, 10V | ±20V | ||||
VIEW |
2,200
In-stock
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Vishay Siliconix | MOSFET P-CH 150V 4.7A 1212-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 62.5W (Tc) | P-Channel | 150V | 4.7A (Tc) | 1.095 Ohm @ 5A, 10V | 3.5V @ 250µA | 11nC @ 10V | 385pF @ 75V | 10V | ±20V | ||||
VIEW |
3,635
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 4.7A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.4W (Ta), 5W (Tc) | P-Channel | 60V | 4.7A (Tc) | 120 mOhm @ 3.2A, 10V | 3V @ 250µA | 22nC @ 10V | 600pF @ 30V | 4.5V, 10V | ±20V | ||||
VIEW |
2,829
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 4.7A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 5W (Tc) | P-Channel | 60V | 4.7A (Tc) | 120 mOhm @ 3.2A, 10V | 3V @ 250µA | 22nC @ 10V | 600pF @ 30V | 4.5V, 10V | ±20V | ||||
VIEW |
3,769
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 4.7A 8SOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2.1W (Tc) | P-Channel | 30V | 4.7A (Tc) | 60 mOhm @ 3A, 10V | 2.5V @ 250µA | 9.6nC @ 4.5V | 560pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,335
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 4.7A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.56W (Tc) | P-Channel | 20V | 4.7A (Tc) | 50 mOhm @ 3A, 4.5V | 800mV @ 250µA | 9.6nC @ 4.5V | 850pF @ 10V | 1.8V, 4.5V | ±10V |