- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,920
In-stock
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
1,883
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
1,099
In-stock
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
