- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,349
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 28A 8PSOP | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-PSOP | 3W (Ta) | N-Channel | - | 30V | 28A (Ta) | 2.8 mOhm @ 28A, 10V | 2.5V @ 1mA | 53nC @ 10V | 3130pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,850
In-stock
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Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,278
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 28A 8HSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 30W (Tc) | N-Channel | - | 30V | 28A (Ta) | 2.3 mOhm @ 28A, 10V | 2.5V @ 1mA | 94nC @ 10V | 5100pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,932
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 28A 8-SOP ADV | U-MOSVI-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 80V | 28A (Ta) | 9.4 mOhm @ 14A, 10V | 2.3V @ 1mA | 91nC @ 10V | 7540pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,605
In-stock
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ON Semiconductor | MOSFET P-CH 100V 28A ATPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | ATPAK (2 leads+tab) | ATPAK | 70W (Tc) | P-Channel | - | 100V | 28A (Ta) | 75 mOhm @ 14A, 10V | - | 73nC @ 10V | 4000pF @ 20V | 10V | ±20V | |||
-Exposed-Pad.jpg)
|
VIEW |
656
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 20V 28A 8SOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2W (Ta) | N-Channel | - | 20V | 28A (Ta) | 20 mOhm @ 20A, 4.5V | 1V @ 250µA | 12.3nC @ 4.5V | 961pF @ 15V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,689
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 28A 8-SOP ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 60V | 28A (Ta) | 5.9 mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
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|
VIEW |
3,141
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 28A 8-HSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 31W (Tc) | N-Channel | - | 30V | 28A (Ta) | 2.6 mOhm @ 28A, 10V | 2.5V @ 1mA | 36nC @ 10V | 2300pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,835
In-stock
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ON Semiconductor | MOSFET N-CH 40V 28A D2PAK | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 254W (Tc) | N-Channel | - | 40V | 28A (Ta) | 5 mOhm @ 80A, 10V | 4V @ 250µA | 235nC @ 10V | 12200pF @ 25V | 10V | ±20V | |||
