- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,752
In-stock
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Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | |||
|
VIEW |
2,599
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 116A 8DSOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 80V | 116A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V | |||
