- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,961
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.5 mOhm @ 21A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | 3175pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,541
In-stock
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ON Semiconductor | MOSFET N-CH 30V 21A 8SOIC | PowerTrench®, SyncFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 21A, 10V | 3V @ 1mA | 91nC @ 10V | 3610pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,691
In-stock
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Texas Instruments | 30V N CH MOSFET | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSONP (3x3.15) | 2.8W (Ta), 63W (Tc) | N-Channel | - | 30V | 21A (Ta) | 3.8 mOhm @ 16A, 10V | 1.7V @ 250µA | 54nC @ 10V | 3640pF @ 15V | 4.5V, 10V | ±20V | |||
,%20SC-63.JPG)
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VIEW |
1,650
In-stock
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ON Semiconductor | MOSFET N-CH 30V 21A D-PAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 28W (Ta) | N-Channel | - | 30V | 21A (Ta) | 35 mOhm @ 7.6A, 10V | 3V @ 250µA | 7nC @ 5V | 462pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,272
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | |||
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VIEW |
1,137
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.7 mOhm @ 20A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | 4090pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,052
In-stock
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ON Semiconductor | MOSFET N-CH 20V 21A D-PAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 3.3W (Ta), 33W (Tc) | N-Channel | - | 20V | 21A (Ta) | 32 mOhm @ 8A, 4.5V | 1.2V @ 250µA | 9nC @ 4.5V | 710pF @ 10V | 2.5V, 4.5V | ±8V | |||
