Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQD5N15TM
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672
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ON Semiconductor MOSFET N-CH 150V 4.3A DPAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 30W (Tc) N-Channel 150V 4.3A (Tc) 800 mOhm @ 2.15A, 10V 4V @ 250µA 7nC @ 10V 230pF @ 25V 10V ±25V
IPD60R1K0CEATMA1
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1,066
In-stock
Infineon Technologies MOSFET N-CH 600V TO-252-3 CoolMOS™ CE Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3 37W (Tc) N-Channel 600V 4.3A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 130µA 13nC @ 10V 280pF @ 100V 10V ±20V
IRFR110TRLPBF
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RFQ
1,553
In-stock
Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 25W (Tc) N-Channel 100V 4.3A (Tc) 540 mOhm @ 2.6A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
SQ2362ES-T1_GE3
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RFQ
1,794
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Vishay Siliconix MOSFET N-CH 60V 4.4A TO236 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 - 3W (Tc) N-Channel 60V 4.3A (Tc) 95 mOhm @ 4.5A, 10V 2.5V @ 250µA 12nC @ 10V 550pF @ 30V 10V ±20V
IRFR110TRPBF
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RFQ
2,996
In-stock
Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) N-Channel 100V 4.3A (Tc) 540 mOhm @ 2.6A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V