- Manufacture :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,714
In-stock
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ON Semiconductor | MOSFET N-CH 20V 3.5A CPH3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CPH | 1W (Ta) | N-Channel | 20V | 3.5A (Ta) | 71 mOhm @ 1.5A, 4.5V | 2.8nC @ 4.5V | 260pF @ 10V | 1.8V, 4.5V | ±12V | |||
|
VIEW |
2,062
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.5A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 20V | 3.5A (Ta) | 56 mOhm @ 2A, 4V | 4.8nC @ 4V | 320pF @ 10V | 1.8V, 4V | ±12V | |||
