Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RUL035N02FRATR
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2,278
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Rohm Semiconductor NCH 20V 3.5A POWER MOSFET Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads TUMT6 1W (Ta) N-Channel - 20V 3.5A (Ta) 43 mOhm @ 3.5A, 4.5V 1V @ 1mA 5.7nC @ 4.5V 460pF @ 10V 1.5V, 4.5V ±10V
RUL035N02TR
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2,896
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Rohm Semiconductor MOSFET N-CH 20V 3.5A TUMT6 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads TUMT6 320mW (Ta) N-Channel - 20V 3.5A (Ta) 43 mOhm @ 3.5A, 4.5V 1V @ 1mA 5.7nC @ 4.5V 460pF @ 10V 1.5V, 4.5V ±10V
RZL035P01TR
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1,251
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Rohm Semiconductor MOSFET P-CH 12V 3.5A TUMT6 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads TUMT6 1W (Ta) P-Channel - 12V 3.5A (Ta) 36 mOhm @ 3.5A, 4.5V 1V @ 1mA - 1940pF @ 6V 1.5V, 4.5V ±10V
SSM3K329R,LF
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809
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Toshiba Semiconductor and Storage MOSFET N CH 30V 3.5A 2-3Z1A U-MOSIII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 30V 3.5A (Ta) 126 mOhm @ 1A, 4V 1V @ 1mA 1.5nC @ 4V 123pF @ 15V 1.8V, 4V ±12V