- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,722
In-stock
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ON Semiconductor | MOSFET N-CH 20V 3.5A SOT563 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563/SCH6 | 800mW (Ta) | N-Channel | - | 20V | 3.5A (Ta) | 64 mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 2.8nC @ 4.5V | 260pF @ 10V | 1.8V, 4.5V | ±10V | ||||
VIEW |
2,773
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,348
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,317
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 3.5A 1206-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.3W (Ta) | P-Channel | - | 20V | 3.5A (Ta) | 76 mOhm @ 3.5A, 4.5V | 450mV @ 250µA (Min) | 10nC @ 4.5V | - | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,714
In-stock
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ON Semiconductor | MOSFET N-CH 20V 3.5A CPH3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CPH | 1W (Ta) | N-Channel | - | 20V | 3.5A (Ta) | 71 mOhm @ 1.5A, 4.5V | - | 2.8nC @ 4.5V | 260pF @ 10V | 1.8V, 4.5V | ±12V | ||||
VIEW |
2,062
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.5A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 20V | 3.5A (Ta) | 56 mOhm @ 2A, 4V | - | 4.8nC @ 4V | 320pF @ 10V | 1.8V, 4V | ±12V | ||||
VIEW |
2,327
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 3.5A 1206-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.3W (Ta) | P-Channel | - | 20V | 3.5A (Ta) | 76 mOhm @ 3.5A, 4.5V | 450mV @ 250µA (Min) | 10nC @ 4.5V | - | 1.8V, 4.5V | ±8V |