- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,108
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.5A 3X3 MLP | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MLP, Power33 | MicroFET 3x3mm | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 140 mOhm @ 3.5A, 4.5V | 1.5V @ 250µA | 4nC @ 4.5V | 280pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
2,472
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 3.5A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | P-Channel | - | 60V | 3.5A (Ta) | 134 mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | 4V, 10V | +10V, -20V | |||
