Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
RZL035P01TR
RFQ
VIEW
RFQ
1,251
In-stock
Rohm Semiconductor MOSFET P-CH 12V 3.5A TUMT6 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads TUMT6 1W (Ta) P-Channel 12V 3.5A (Ta) 36 mOhm @ 3.5A, 4.5V 1V @ 1mA - 1940pF @ 6V 1.5V, 4.5V ±10V
RSQ035N03TR
RFQ
VIEW
RFQ
2,410
In-stock
Rohm Semiconductor MOSFET N-CH 30V 3.5A TSMT6 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 1.25W (Ta) N-Channel 30V 3.5A (Ta) 62 mOhm @ 3.5A, 10V 2.5V @ 1mA 7.4nC @ 5V 290pF @ 10V 4V, 10V 20V
RSQ035P03TR
RFQ
VIEW
RFQ
1,420
In-stock
Rohm Semiconductor MOSFET P-CH 30V 3.5A TSMT6 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 1.25W (Ta) P-Channel 30V 3.5A (Ta) 65 mOhm @ 3.5A, 10V 2.5V @ 1mA 9.2nC @ 5V 780pF @ 10V 4V, 10V ±20V