Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
RQ5E035BNTCL
RFQ
VIEW
RFQ
666
In-stock
Rohm Semiconductor MOSFET N-CH 30V 3.5A TSMT - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 1W (Ta) N-Channel 30V 3.5A (Ta) 37 mOhm @ 3.5A, 10V 2.5V @ 1mA 6nC @ 10V 250pF @ 15V 4.5V, 10V ±20V
RQ5C035BCTCL
RFQ
VIEW
RFQ
2,117
In-stock
Rohm Semiconductor MOSFET P-CHANNEL 20V 3.5A TSMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 1W (Tc) P-Channel 20V 3.5A (Ta) 59 mOhm @ 3.5A, 4.5V 1.2V @ 1mA 6.5nC @ 4.5V 460pF @ 10V 4.5V ±8V
RQ5E035ATTCL
RFQ
VIEW
RFQ
3,628
In-stock
Rohm Semiconductor MOSFET P-CH 30V 3.5A TSMT - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 1W (Ta) P-Channel 30V 3.5A (Ta) 50 mOhm @ 3.5A, 10V 2.5V @ 1mA 10nC @ 10V 475pF @ 15V 4.5V, 10V ±20V