Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NP83P06PDG-E1-AY
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Renesas Electronics America MOSFET P-CH 60V 83A TO-263 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 1.8W (Ta), 150W (Tc) P-Channel - 60V 83A (Tc) 8.8 mOhm @ 41.5A, 10V 2.5V @ 1mA 190nC @ 10V 10100pF @ 10V 4.5V, 10V ±20V
NP83P04PDG-E1-AY
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2,292
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Renesas Electronics America MOSFET P-CH 40V 83A TO-263 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 1.8W (Ta), 150W (Tc) P-Channel - 40V 83A (Tc) 5.3 mOhm @ 41.5A, 10V 2.5V @ 1mA 200nC @ 10V 9820pF @ 10V 4.5V, 10V ±20V
IRFS4228TRLPBF
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1,257
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Infineon Technologies MOSFET N-CH 150V 83A D2PAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 150V 83A (Tc) 15 mOhm @ 33A, 10V 5V @ 250µA 107nC @ 10V 4530pF @ 25V 10V ±30V
IPB108N15N3GATMA1
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1,687
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Infineon Technologies MOSFET N-CH 150V 83A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 214W (Tc) N-Channel - 150V 83A (Tc) 10.8 mOhm @ 83A, 10V 4V @ 160µA 55nC @ 10V 3230pF @ 75V 8V, 10V ±20V