- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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638
In-stock
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Infineon Technologies | MOSFET N-CH 40V 240A D2PAK-7 | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | D2PAK-7 | 245W (Tc) | N-Channel | - | 40V | 240A (Tc) | 1 mOhm @ 100A, 10V | 3.9V @ 250µA | 315nC @ 10V | 10250pF @ 25V | 6V, 10V | ±20V | |||
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2,686
In-stock
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ON Semiconductor | MOSFET N-CH 80V 240A D2PAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | D²PAK (TO-263) | 3.8W (Ta), 214W (Tc) | N-Channel | - | 80V | 240A (Tc) | 2.2 mOhm @ 30A, 10V | 4V @ 250µA | 200nC @ 10V | 15400pF @ 40V | 8V, 10V | ±20V | |||
